Fluorine Ions Implantation Enhanced Performance of Poly-Si Thin Film Transistors Using
نویسندگان
چکیده
منابع مشابه
Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of polycrystalline-Si thin-film transistors
Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of poly-Si TFT have been studied. For a LDD implantation dose of 2–4 × 1013 cm−2, no significantly large difference in on-state current and off-state leakage is found. For a LDD implantation energy of 50–100 keV, however, the higher LDD implantation energy results in smaller off-state leakage and more re...
متن کاملNovel Processes for Poly-Si Thin-Film Transistors on Plastic Substrates
Novel Processes for Poly-Si Thin-Film Transistors on Plastic Substrates
متن کاملA study on low temperature transport properties of independent double-gated poly-Si nanowire transistors.
Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 µm were fabricated and characterized. Electrical measurements performed under cryogenic ambient displayed intriguing characteristics in terms of length dependent abrupt switching behavior for one of the sing...
متن کاملEffects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...
متن کاملLow Temperature Polysilicon Thin-Film Transistors on Flexible Substrates
We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...
متن کامل